zxmn4a06gq document number: ds36694 rev. 2 - 2 1 of 6 www.diodes.com january 2014 ? diodes incorporated zxmn4 a 06gq advanced information d s g 40v n-channel enhanc ement mode mosfet product summary v (br)dss r ds(on) i d t a = +25c 40v 0.05 ? @ v gs = 10v 7a description this new generation mosfet has been designed to minimize the on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. applications ? dc-dc converters ? audio output stages ? relay and solenoid driving ? motor control features ? low on-resistance ? fast switching speed ? low threshold ? low gate drive ? lead-free finish; rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability ? ppap available mechanical data ? case: sot223 ? case material: molded plastic, ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish - matte tin annealed over copper lead frame. solderable per mil-std-202, method 208 ? weight: 0.112 grams (approximate) ordering information (note 4 & 5) part number compliance case packaging zxmn4a06gqta automotive sot223 1,000/tape & reel ZXMN4A06GQTC automotive sot223 4,000/tape & reel note: 1. eu directive 2002/95/ec (rohs) & 2011/65/eu (roh s 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. automotive products are aec-q101 qualified and are ppap capable. automotive, aec-q101 and standard products are electrically an d thermally the same, except where specified. for more information, please refer to http://www .diodes.com/quality/product_grade_definitions/. 5. for packaging details, go to our websit e at http://www.diodes.com /products/packages.html. marking information equivalent circuit top view sot223 pin out - top view e3 green n4a06 yww = manufacturer?s marking n4a06 = marking code yww = date code marking y = year (ex: 3 = 2013) ww = week (01 - 53)
zxmn4a06gq document number: ds36694 rev. 2 - 2 2 of 6 www.diodes.com january 2014 ? diodes incorporated zxmn4 a 06gq advanced information maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value unit drain-source voltage v dss 40 v gate-source voltage v gs 20 v continuous drain current v gs = 10v (note 7) i d 7 a t a = +70c (note 7) 5.6 (note 6) 5 pulsed drain current v gs = 10v (note 8) i dm 22 a continuous source current (body diode) (note 7) i s 5.4 a pulsed source current (body diode) (note 8) i sm 22 a thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value unit power dissipation linear derating factor (note 6) p d 2 16 w mw/c (note 7) 3.9 31 thermal resistance, junction to ambient (note 6) r ja 62.5 c/w (note 7) 32.2 operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics drain-source breakdown voltage bv dss 40 ? ? v i d = 250a, v gs = 0v zero gate voltage drain current i dss ? ? 1 a v ds = 40v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 20v, v ds = 0v on characteristics gate threshold voltage v gs(th) 1 ? ? v i d = 250 a, v ds = v gs static drain-source on-resistance (note 9) r ds(on) ? ? 0.05 ? v gs = 10v, i d = 4.5a 0.075 v gs = 4.5v, i d = 3.2a forward transconductance (notes 11) g fs ? 8.7 ? s v ds = 15v, i d = 2.5a diode forward voltage (note 9) v sd ? 0.8 0.95 v i s = 2.5a, v gs = 0v, t j = +25c reverse recovery time (note 11) t rr 14.5 ? ns i f = 2.5a, di/dt = 100a/s, t j = +25c reverse recovery charge (note 11) q rr ? 7.8 ? nc dynamic characteristics (note 10) input capacitance c iss ? 746 ? pf v ds = 40v, v gs = 0v f = 1mhz output capacitance c oss ? 93 ? pf reverse transfer capacitance c rss ? 60 ? pf total gate charge (note 11) q g ? 19 ? nc v ds = 30v, v gs = 10v, i d = 2.5a (refer to test circuit) gate-source charge (note 11) q gs ? 2.3 ? nc gate-drain charge (note 11) q gd ? 4.1 ? nc turn-on delay time (note 11) t d(on) ? 3.4 ? ns v dd = 30v, v gs = 10v i d = 2.5a, r g ? 6 ? (refer to test circuit) turn-on rise time (note 11) t r ? 2.8 ? ns turn-off delay time (note 11) t d(off) ? 20 ? ns turn-off fall time (note 11) t f ? 7.7 ? ns notes: 6. for a device surface mounted on 25mm x 25mm fr-4 pcb with high coverage of single sided 1oz copper, in still air co nditions. 7. for a device surface moun ted on fr-4 pcb measured at t Q 5 secs. 8. repetitive rating 25mm x 25mm fr4 pcb, d = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. 9. measured under pulsed conditions. pulse width 300s; duty cycle 2%. 10. switching characteristics are independent of operating junction temperatures. 11. for design aid only, not subject to production testing.
zxmn4a06gq document number: ds36694 rev. 2 - 2 3 of 6 www.diodes.com january 2014 ? diodes incorporated zxmn4 a 06gq advanced information 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 0 0.5 1 1.5 2 2.5 3 3.5 4 v , drain-source voltage (v) figure 1 typical output characteristic ds i, d r ai n c u r r e n t (a) d v= 2.5v gs v= 3.0v gs v= 3.5v gs v= 4.0v gs v= 10v gs v= 2.0v gs 0 2 4 6 8 10 12 14 16 18 20 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v , gate-source voltage (v) gs figure 2 typical transfer characteristics i, d r ain c u r r en t (a) d v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a 0.01 110100 1.0 0.1 v = 4.5v gs v = 10v gs v = 3.0v gs v = 4.0v gs v = 3.5v gs v = 2.5v gs i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , drain-s o urce o n-resistance ( ) ds(on) 0 0.2 0.4 0.6 0.8 1 0 2 4 6 8 10 12 14 16 18 20 v , gate-source voltage (v) gs figure 4 typical transfer characteristic r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) i = 4.5a d i = 3.2a d 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0 2 4 6 8 101214161820 i , drain current (a) d figure 5 typical on-resistance vs. drain current and temperature r , d r ain-s o u r ce o n- r esistance ( ) ds(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs 0 0.5 1 1.5 2 2.5 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) figure 6 on-resistance variation with temperature j r , d r ain-s o u r c e on-resistance (normalized) ds(on) v = 4.5v i = 5.0a gs d v=v i = 4.5a gs d 10
zxmn4a06gq document number: ds36694 rev. 2 - 2 4 of 6 www.diodes.com january 2014 ? diodes incorporated zxmn4 a 06gq advanced information 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) figure 7 on-resistance variation with temperature j r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) v = 4.5v i= 5.0a gs d v=v i= 4.5a gs d 10 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50-25 0 25 50 75100125150 t , junction temperature ( c) figure 8 gate threshold variation vs. ambient temperature j i= 1ma d i = 250a d v , gate threshold voltage (v) gs(th) 0 2 4 6 8 10 12 14 16 18 20 0 0.3 0.6 0.9 1.2 1.5 v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current i, s o u r c e c u r r en t (a) s t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v , drain-source voltage (v) ds figure 10 typical junction capacitance c , j u n c t i o n c a p a c i t a n c e (pf) t c iss c oss c rss f = 1mhz 0 2 4 6 8 10 02468101214161820 q(nc) g , total gate charge figure 11 gate charge v g a t e t h r es h o ld v o l t a g e (v) gs v = 30v i= a ds d 2.5 0.01 0.1 1 10 100 0.1 1 10 100 dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w -v , drain-source voltage (v) figure 12 soa, safe operation area ds -i , d r ain c u r r en t (a) d t = 150c t = 25c j(max) a v = 4.5v single pulse gs dut on 1 * mrp board r limited ds(on)
zxmn4a06gq document number: ds36694 rev. 2 - 2 5 of 6 www.diodes.com january 2014 ? diodes incorporated zxmn4 a 06gq advanced information a1 a 7 7 d b e e1 b1 c e1 l 0 - 1 0 q e 0.25 seating plane gauge plane package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com /datasheets/ap02001.pdf for latest version. 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, pulse duration time (sec) figure 13 transient thermal resistance r(t), t r ansien t t h e r mal r esis t an c e d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse r (t) = r(t) * r r = 95c/w duty cycle, d = t1/ t2 ? ja ja ja sot223 dim min max typ a 1.55 1.65 1.60 a1 0.010 0.15 0.05 b1 2.90 3.10 3.00 b2 0.60 0.80 0.70 c 0.20 0.30 0.25 d 6.45 6.55 6.50 e 3.45 3.55 3.50 e1 6.90 7.10 7.00 e ? ? 4.60 e1 ? ? 2.30 l 0.85 1.05 0.95 q 0.84 0.94 0.89 all dimensions in mm dimensions value (in mm) x1 3.3 x2 1.2 y1 1.6 y2 1.6 c1 6.4 c2 2.3 x2 c1 c2 x1 y2 y1
zxmn4a06gq document number: ds36694 rev. 2 - 2 6 of 6 www.diodes.com january 2014 ? diodes incorporated zxmn4 a 06gq advanced information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2014, diodes incorporated www.diodes.com
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